{"title":"光折变晶体中总有效阱密度强度依赖性的理论研究","authors":"Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian","doi":"10.1088/1004-423X/8/9/005","DOIUrl":null,"url":null,"abstract":"Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SDγT/STγD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SDγT/STγD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.","PeriodicalId":188146,"journal":{"name":"Acta Physica Sinica (overseas Edition)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Theoretical study of the intensity dependence of total effective trap density in photorefractive crystals\",\"authors\":\"Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian\",\"doi\":\"10.1088/1004-423X/8/9/005\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SDγT/STγD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SDγT/STγD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.\",\"PeriodicalId\":188146,\"journal\":{\"name\":\"Acta Physica Sinica (overseas Edition)\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Acta Physica Sinica (overseas Edition)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1004-423X/8/9/005\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Acta Physica Sinica (overseas Edition)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1004-423X/8/9/005","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
从理论上研究了双中心和三电荷态光折变晶体的总有效阱密度Neff的强度依赖性。结果表明,在三电荷态晶体中,Neff总是随着强度的增加而增加,而在双中心晶体中,Neff的行为更为复杂。当sd - γ t / st - γ d较小时,a型和b型双中心晶体的Neff均随强度的增加而增大并趋于饱和。当sd - γ t / st - γ d较大时,a型晶体Neff增大到最大值后减小,b型晶体Neff减小较大。两种晶体的内夫强度依赖性的不同来自于它们不同的能级结构。
Theoretical study of the intensity dependence of total effective trap density in photorefractive crystals
Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SDγT/STγD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SDγT/STγD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.