梯度通道设计无结FinFET的性能评估

2017 4th International Conference on Signal Processing, Computing and Control (ISPCC) Pub Date : 2017-09-01 DOI:10.1109/ISPCC.2017.8269706

S. Kaundal, Shelja Kaushal, A. Rana

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引用次数: 4

摘要

本文利用TCAD仿真研究了具有横向梯度通道和差分梯度通道的无结FinFET设计。结果表明，与横向梯度jl FinFET (LG-JL FinFET)和常规均匀掺杂jl FinFET (UD-JL FinFET)相比，差分梯度jl FinFET (DG-JL FinFET)具有更好的亚阈值特性。然而，在LD-JL FinFET中驱动电流更高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance estimation of junctionless FinFET with graded channel design

This paper investigates the Junctionless (JL) FinFET with laterally graded channel and differentially graded channel design using TCAD simulation. It is demonstrated that differentially graded-JL FinFET (DG-JL FinFET) provides better subthreshold characteristics as compared to laterally graded-JL FinFET (LG-JL FinFET) and conventional uniformly doped-JL FinFET (UD-JL FinFET). However, the drive current is higher in LD-JL FinFET.

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2017 4th International Conference on Signal Processing, Computing and Control (ISPCC)

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