{"title":"用于0.15µm GaAs pHEMT工艺的汽车雷达k波段驱动功率放大器","authors":"Xianhu Luo, Xu Cheng, Jiangan Han, Xinlin Xia, Yingjiang Guo","doi":"10.1109/PIERS-Fall48861.2019.9021342","DOIUrl":null,"url":null,"abstract":"In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P−1 dB, out) is presented, which is designed and manufactured in the 0.15-µm GaAs pHEMT process. In order to achieve high gain with simple direct current (DC) bias, the four-stage common source amplifier based on self-biased techniques are employed. The DC feed network adopts a dual inductors topology, which makes the DPA achieve a high power capacity threshold. Furthermore, in order to obtain higher linearity and P−1 dB, out, the maximum power output matching are adopted in the DPA. The DPA exhibit a measured gain more than 20 dB, and a P−1 dB, out over 16 dBm from 20 to 26 GHz and the S11 and S22 are less than −8.5 dB within the entire band of frequencies, it is just with only one DC feed pad and serviceable for the automotive radar applications.","PeriodicalId":197451,"journal":{"name":"2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A K-band Driven Power Amplifier for Automotive Radar Applications in 0.15-µm GaAs pHEMT Process\",\"authors\":\"Xianhu Luo, Xu Cheng, Jiangan Han, Xinlin Xia, Yingjiang Guo\",\"doi\":\"10.1109/PIERS-Fall48861.2019.9021342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P−1 dB, out) is presented, which is designed and manufactured in the 0.15-µm GaAs pHEMT process. In order to achieve high gain with simple direct current (DC) bias, the four-stage common source amplifier based on self-biased techniques are employed. The DC feed network adopts a dual inductors topology, which makes the DPA achieve a high power capacity threshold. Furthermore, in order to obtain higher linearity and P−1 dB, out, the maximum power output matching are adopted in the DPA. The DPA exhibit a measured gain more than 20 dB, and a P−1 dB, out over 16 dBm from 20 to 26 GHz and the S11 and S22 are less than −8.5 dB within the entire band of frequencies, it is just with only one DC feed pad and serviceable for the automotive radar applications.\",\"PeriodicalId\":197451,\"journal\":{\"name\":\"2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PIERS-Fall48861.2019.9021342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PIERS-Fall48861.2019.9021342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
本文提出了一种采用0.15µm GaAs pHEMT工艺设计和制造的具有高增益和高输出1db压缩点(P−1db, out)的k波段驱动功率放大器(DPA)。为了在简单的直流偏置下实现高增益,采用了基于自偏置技术的四级共源放大器。直流馈电网络采用双电感拓扑,使DPA实现了较高的功率容量阈值。此外,为了获得更高的线性度和P−1 dB out,在DPA中采用了最大功率输出匹配。DPA的测量增益超过20 dB, P - 1 dB,在20至26 GHz范围内输出超过16 dBm, S11和S22在整个频段内的频率小于- 8.5 dB,它只有一个直流馈电板,可用于汽车雷达应用。
A K-band Driven Power Amplifier for Automotive Radar Applications in 0.15-µm GaAs pHEMT Process
In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P−1 dB, out) is presented, which is designed and manufactured in the 0.15-µm GaAs pHEMT process. In order to achieve high gain with simple direct current (DC) bias, the four-stage common source amplifier based on self-biased techniques are employed. The DC feed network adopts a dual inductors topology, which makes the DPA achieve a high power capacity threshold. Furthermore, in order to obtain higher linearity and P−1 dB, out, the maximum power output matching are adopted in the DPA. The DPA exhibit a measured gain more than 20 dB, and a P−1 dB, out over 16 dBm from 20 to 26 GHz and the S11 and S22 are less than −8.5 dB within the entire band of frequencies, it is just with only one DC feed pad and serviceable for the automotive radar applications.