60 GHz变频90纳米CMOS电路

M. Kantanen, J. Holmberg, T. Karttaavi, J. Volotinen
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引用次数: 10

摘要

本文介绍了一种有源单级单端30 ~ 60ghz倍频器和带差动缓冲级的电阻下变频混频器的设计和特性。这些mmic采用90纳米CMOS工艺实现。该倍频器在0 dBm输入功率和13.7 mW功耗下具有7.1 dB转换损耗和10.8 dB基频抑制。当输入功率为5dbm时,最大输出功率为-4.2 dBm。该混频器具有9.8 dB转换增益和+5 dBm本地振荡器电平。压缩点P1dB为- 2dbm,功耗14mw。
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60 GHz Frequency Conversion 90 nm CMOS Circuits
This paper presents design and a characterisation of an active single-stage single-ended 30 to 60 GHz frequency doubler and a resistive down conversion mixer with differential buffer stage. These MMICs are realised using 90-nm CMOS process. The doubler exhibit 7.1 dB conversion loss and 10.8 dB fundamental frequency suppression with 0 dBm input power and 13.7 mW power consumption. Maximum output power of -4.2 dBm is achieved with 5 dBm input power. The mixer has 9.8 dB conversion gain with +5 dBm local oscillator level. The compression point P1dB is -2 dBm with 14 mW power consumption.
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