用局部厚度减薄工艺制备硅光子器件的垂直锥度结构

S. Abe, H. Hara, S. Masuda, H. Yamada
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引用次数: 0

摘要

我们开发了一种简单的低插入损耗垂直锥结构的制造工艺,可以局部优化硅光子器件的硅厚度。制作的垂直锥形结构实现了硅波导厚度从400 nm到220 nm的转换,其插入损耗小于0.5 dB。
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Fabrication of Vertical-Taper Structures for Silicon Photonic Devices by Local-Thickness-Thinning Process
We have developed a simple fabrication process of low-insertion-loss vertical-taper structures which can locally optimize the Si thickness of silicon-photonic devices. Fabricated vertical-taper structures realized the conversion of Si-waveguide thickness from 400 nm to 220 nm, whose insertion loss was measured to be less than 0.5 dB.
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