Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions

Considering the importance of In(Ga)As/GaAs QDIPs, a post-growth method had been developed for enhancing QDIP characteristics using low energy light ion (H-) implantation. Dark current density was reduced by about five orders for the implanted devices due to the reduction in field assisted tunneling process for dark current generation, even at a very high bias of operation. Stronger multicolor mid wavelength photo response (~5.6 µm) was achieved at a very low bias of operation for the implanted device.