一种带片上SIW谐振器的130纳米SiGe BiCMOS交叉耦合e波段压控振荡器

2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO) Pub Date : 2018-10-01 DOI:10.23919/RADIO.2018.8572477

Dewald Sieberhagen, H. Nel, T. Stander

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引用次数: 4

摘要

我们研究了在130nm SiGe BiCMOS中使用带有变容管调谐的SIW片上腔作为交叉耦合VCO的谐振槽。在调谐范围内获得了31.7到214的卸载q因子。仿真结果表明，该VCO的频率调谐范围为81.4 ~ 82.2 GHz，在1mhz偏移时平均相位噪声为−79 dBc/Hz。研究发现，腔体的长馈线抵消了高$\mathbf{Q}_{0}$腔体可能带来的相位噪声改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Cross-Coupled E-Band VCO with on-chip SIW Resonator in 130nm SiGe BiCMOS

We investigate the use of an SIW cavity on-chip with varactor tuning as a resonant tank for a cross-coupled VCO in 130nm SiGe BiCMOS. Unloaded Q-factors of 31.7 to 214 over the tuning range are obtained. The VCO's frequency tuning range is simulated to be 81.4 – 82.2 GHz, with an average phase noise of −79 dBc/Hz at 1 MHz offset. It is found that the long feed lines to the cavity negate the possible improvement in phase noise gained from the high $\mathbf{Q}_{0}$ cavity.

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2018 IEEE Radio and Antenna Days of the Indian Ocean (RADIO)

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