栅极内无结晶体管(GI-JLT)瞬态分析

Pankaj Kumar, P. Kondekar, Sangeeta Singh
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引用次数: 1

摘要

本文对n型栅内无结晶体管(GI-JLT)的瞬态性能进行了分析。利用三维玻姆量子势(BQP)输运器件仿真对其延迟性能和功耗性能进行了评价。由于GI-JLT对器件工作的栅极静电控制更大,因此在低功率和高频应用中,GI-JLT比GAA-JLT表现出更好的器件性能特征。
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Transient analysis of gate inside junctionless transistor (GI-JLT)
In this letter, the transient performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate its delay and power dissipation performance. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.
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