{"title":"SiC逆变器永磁同步电机驱动传导噪声的实验研究:缓冲电路传导降噪","authors":"Tomohiro Ozaki, T. Funaki, T. Ibuchi","doi":"10.1109/EMCT.2017.8090353","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) devices are attracting attention as next generation power device because of their high breakdown voltage, low conduction loss, and fast switching speed compared with conventional Silicon (Si) device. SiC power device is expected to be used in electric vehicle and hybrid electric vehicle. The large di/dt and dv/dt in fast switching operation interact with parasitic component in circuit wiring, and causes conducted noise. This study focuses on the switching behavior of SiC MOSFET and the conducted noise characteristics in a inverter. The effect of snubber circuit is evaluated with its combination of installation for SiC module.","PeriodicalId":104929,"journal":{"name":"2017 IV International Electromagnetic Compatibility Conference (EMC Turkiye)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An experimental study on conducted noise emission for PMSM drive with SiC inverter: Conducted noise reduction by snubber circuit\",\"authors\":\"Tomohiro Ozaki, T. Funaki, T. Ibuchi\",\"doi\":\"10.1109/EMCT.2017.8090353\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon carbide (SiC) devices are attracting attention as next generation power device because of their high breakdown voltage, low conduction loss, and fast switching speed compared with conventional Silicon (Si) device. SiC power device is expected to be used in electric vehicle and hybrid electric vehicle. The large di/dt and dv/dt in fast switching operation interact with parasitic component in circuit wiring, and causes conducted noise. This study focuses on the switching behavior of SiC MOSFET and the conducted noise characteristics in a inverter. The effect of snubber circuit is evaluated with its combination of installation for SiC module.\",\"PeriodicalId\":104929,\"journal\":{\"name\":\"2017 IV International Electromagnetic Compatibility Conference (EMC Turkiye)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IV International Electromagnetic Compatibility Conference (EMC Turkiye)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMCT.2017.8090353\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IV International Electromagnetic Compatibility Conference (EMC Turkiye)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCT.2017.8090353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An experimental study on conducted noise emission for PMSM drive with SiC inverter: Conducted noise reduction by snubber circuit
Silicon carbide (SiC) devices are attracting attention as next generation power device because of their high breakdown voltage, low conduction loss, and fast switching speed compared with conventional Silicon (Si) device. SiC power device is expected to be used in electric vehicle and hybrid electric vehicle. The large di/dt and dv/dt in fast switching operation interact with parasitic component in circuit wiring, and causes conducted noise. This study focuses on the switching behavior of SiC MOSFET and the conducted noise characteristics in a inverter. The effect of snubber circuit is evaluated with its combination of installation for SiC module.
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