MOS技术中DCG-FGT及其等效电路的比较研究

2013 13th International Symposium on Communications and Information Technologies (ISCIT) Pub Date : 2013-10-24 DOI:10.1109/ISCIT.2013.6645858

A. Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour

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摘要

本文对双控门浮栅晶体管(DCG-FGT)及其由标准件组成的等效电路进行了比较。我们通过电子模拟器(ELDO)下的测量和仿真证明了DCG-FGT的优势。用标准MOS技术再现DCG-FGT工作模式并不容易。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of comparison between the DCG-FGT and its equivalent circuit in MOS technology

In this paper, a comparison between the DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) and its equivalent circuit composed of standard components is proposed. We demonstrate the DCG-FGT advantages with measurement and simulations under electrical simulator (ELDO). It is not easily to reproduce the DCG-FGT operating mode with standard MOS technology.

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2013 13th International Symposium on Communications and Information Technologies (ISCIT)

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