L. Rodoni, T. Morf, F. Ellinger, G. von Buren, H. Jackel
{"title":"用于光收发器的90nm CMOS低功耗24gb /s多路复用器","authors":"L. Rodoni, T. Morf, F. Ellinger, G. von Buren, H. Jackel","doi":"10.1109/EDMO.2004.1412398","DOIUrl":null,"url":null,"abstract":"In this paper, an integrated 2-to-1 selector multiplexer in 90-nm complementary metal-oxide semiconductor (CMOS) digital technology is presented. The multiplexer is based on a differential Gilbert-cell structure. Peaking inductors are used to improve the bandwidth. At a supply voltage of 1.2 V, a speed performance of 24 Gb/s is achieved. The circuit core consumes only 10 mA. Common drain output buffers allow measurements at 50 /spl Omega/.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-power-consuming 24-Gb/s multiplexer in 90-nm CMOS for optical transceivers\",\"authors\":\"L. Rodoni, T. Morf, F. Ellinger, G. von Buren, H. Jackel\",\"doi\":\"10.1109/EDMO.2004.1412398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an integrated 2-to-1 selector multiplexer in 90-nm complementary metal-oxide semiconductor (CMOS) digital technology is presented. The multiplexer is based on a differential Gilbert-cell structure. Peaking inductors are used to improve the bandwidth. At a supply voltage of 1.2 V, a speed performance of 24 Gb/s is achieved. The circuit core consumes only 10 mA. Common drain output buffers allow measurements at 50 /spl Omega/.\",\"PeriodicalId\":424447,\"journal\":{\"name\":\"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.2004.1412398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.2004.1412398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-power-consuming 24-Gb/s multiplexer in 90-nm CMOS for optical transceivers
In this paper, an integrated 2-to-1 selector multiplexer in 90-nm complementary metal-oxide semiconductor (CMOS) digital technology is presented. The multiplexer is based on a differential Gilbert-cell structure. Peaking inductors are used to improve the bandwidth. At a supply voltage of 1.2 V, a speed performance of 24 Gb/s is achieved. The circuit core consumes only 10 mA. Common drain output buffers allow measurements at 50 /spl Omega/.
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