{"title":"宽带中等功率晶体管放大器12-18 GHz","authors":"M. Randus, K. Hoffmann","doi":"10.1109/RADIOELEK.2007.371673","DOIUrl":null,"url":null,"abstract":"A medium-power two-stage transistor microwave amplifier for frequency band of 12 to 18 GHz using eight packaged HEMTs has been designed and developed. Gain over 16 dB, output power P-1 db > 22 dBm and return loss better than 10 dB both on the input and output has been achieved in the whole band. The input and output are DC grounded to protect the amplifier from electrostatic discharge (ESD). Mutually linked AWR microwave office circuit simulator, 3D EM field simulator CST microwave studio and precise small-signal s-parameters vector measurements were used for the design.","PeriodicalId":446406,"journal":{"name":"2007 17th International Conference Radioelektronika","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband Medium-Power Transistor Amplifier 12-18 GHz\",\"authors\":\"M. Randus, K. Hoffmann\",\"doi\":\"10.1109/RADIOELEK.2007.371673\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A medium-power two-stage transistor microwave amplifier for frequency band of 12 to 18 GHz using eight packaged HEMTs has been designed and developed. Gain over 16 dB, output power P-1 db > 22 dBm and return loss better than 10 dB both on the input and output has been achieved in the whole band. The input and output are DC grounded to protect the amplifier from electrostatic discharge (ESD). Mutually linked AWR microwave office circuit simulator, 3D EM field simulator CST microwave studio and precise small-signal s-parameters vector measurements were used for the design.\",\"PeriodicalId\":446406,\"journal\":{\"name\":\"2007 17th International Conference Radioelektronika\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 17th International Conference Radioelektronika\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADIOELEK.2007.371673\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 17th International Conference Radioelektronika","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADIOELEK.2007.371673","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
设计并研制了一种使用8个封装hemt的中功率两级晶体管微波放大器，用于12 ~ 18 GHz频段。在整个频段内，增益超过16 dB，输出功率P-1 dB > 22 dBm，输入和输出的回波损耗均优于10 dB。输入和输出是直流接地，以保护放大器免受静电放电(ESD)。采用相互链接的AWR微波办公电路模拟器、三维电磁场模拟器CST微波工作室和精确的小信号s参数矢量测量进行设计。
A medium-power two-stage transistor microwave amplifier for frequency band of 12 to 18 GHz using eight packaged HEMTs has been designed and developed. Gain over 16 dB, output power P-1 db > 22 dBm and return loss better than 10 dB both on the input and output has been achieved in the whole band. The input and output are DC grounded to protect the amplifier from electrostatic discharge (ESD). Mutually linked AWR microwave office circuit simulator, 3D EM field simulator CST microwave studio and precise small-signal s-parameters vector measurements were used for the design.
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