Effect of recessed electrodes on contact resistance in Organic Thin Film Transistor based on polymer dielectric

Even though there has been a significant progress in organic thin film transistor (OTFT), one of the major limitations that hinders the device performance is contact effect at the junction of semiconductor and source-drain contacts The effect becomes more effective while scaling down the channel length resulting in apparent mobility reduction, hysteresis etc. [1] . Efforts have been made to reduce contact resistance through the reduction of the metal-semiconductor injection barrier by either metal work function modification or by introducing a carrier injecting buffer layer. In this work, recessed drain-source structure on solution-processed polymer gate dielectric is demonstrated to realize bottom gate bottom contact (BGBC) OTFT based on poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2- b]thiophene](PBTTT-C14) as semiconductor.