{"title":"考虑带电粒子轨道中电子-空穴气体加热的亚微米超高频半导体二极管结构中单辐射效应的物理拓扑模型","authors":"E. Tarasova","doi":"10.46354/i3m.2021.emss.040","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":322169,"journal":{"name":"Proceedings of the 33rd European Modeling & Simulation Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Physical Topological Modeling Of Single Radiation Effects In Submicron Ultrahigh-Frequency Semiconductor Diode Structures With Taking In Account The Heating Of An Electron-Hole Gas In The Charged Particle Track\",\"authors\":\"E. Tarasova\",\"doi\":\"10.46354/i3m.2021.emss.040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":322169,\"journal\":{\"name\":\"Proceedings of the 33rd European Modeling & Simulation Symposium\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 33rd European Modeling & Simulation Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.46354/i3m.2021.emss.040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 33rd European Modeling & Simulation Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.46354/i3m.2021.emss.040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Physical Topological Modeling Of Single Radiation Effects In Submicron Ultrahigh-Frequency Semiconductor Diode Structures With Taking In Account The Heating Of An Electron-Hole Gas In The Charged Particle Track