基于NV-RAM的可靠高速紧凑型cam匹配电路

Research and Development on Information and Communication Technology Pub Date : 2022-09-30 DOI:10.32913/mic-ict-research.v2022.n2.1060

Quang-Manh Duong, Quang-Kien Trinh, Hai D. Nguyen, Van‐Phuc Hoang, H. Vu, Dinh‐Ha Dao, D. Luong, Van-Toan Tran

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摘要

本文提出了一种基于非易失性随机存取存储器(NV-RAM)技术实现内容地址存储器(CAM)的有效方法。我们使用了在65nmCMOS工艺上实现的2T-2R位元结构和特殊的内存匹配电路来实现低延迟和节能的查找操作。在Synopsys HSPICE上的仿真结果表明，根据具体的设计配置，所提出的凸轮设计可以实现0.03 ~ 4.61%的搜索错误率，每比特搜索能量为4.36 ~ 6.47 fJ，以及极小的搜索延迟(0.11 ~ 0.12 nsns)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Reliable High-speed Compact In-memory Matching Circuit for CAM-Application Based on NV-RAM

This paper presents an effective approach forimplementing content address memory (CAM) based on Nonvolatile random-access memory (NV-RAM) technologies. Weused the 2T-2R bitcell structure implemented on a 65nmCMOS process with a special in-memory matching circuitfor realizing low-delay and energy-efficient lookup operations.The simulation results on Synopsys HSPICE indicate that theproposed CAM design can achieve a search error rate of0.03-4.61%, search energy per bit of 4.36-6.47 fJ, and anextremely small search latency varying from 0.11-0.12 nsdepending on the specific design configurations.

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Research and Development on Information and Communication Technology

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