高级SOI过程中用于频率标度的细粒度体偏置

Johannes Maximilian Kühn, H. Amano, O. Bringmann, W. Rosenstiel
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引用次数: 3

摘要

新的SOI工艺在低功耗和性能方面提供了前所未有的灵活性。在频率缩放场景下,对意法半导体28nm UTBB-FDSOI中细粒度体偏置的使用进行了评估,用于动态可重构处理器设计。对加工单元进行了三种不同的策略评估:静态、可编程和动态车身偏置。细粒体偏置显著减轻了前倾体偏置增加的泄漏电流,平均在42.85% ~ 64.5%之间。这使得静态身体偏置成为可行的低成本选择,而动态身体偏置即使在短时间内也是值得的。
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Fined-grained body biasing for frequency scaling in advanced SOI processes
New SOI processes offer unprecedented flexibility in regard to low-power and performance. The use of fine-grained body biasing in STMicro's 28nm UTBB-FDSOI is evaluated for a Dynamically Reconfigurable Processor design in a frequency scaling scenario. Three different strategies are evaluated for Processing Elements: Static, programmable and dynamic body biasing. Fine-grained body biasing significantly mitigates increased leakage currents of forward body biasing between 42.85% to 64.5% on average. This makes static body biasing a viable low-cost option and makes dynamic body biasing worthwhile even at short time periods.
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