60 GHz倒装倍频/PA链MMIC,低输入功率和高输出功率

Youngmin Kim, Sang-Sub Song, K. Seo, Y. Kwon
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引用次数: 4

摘要

基于商用0.15 um GaAs pHEMT工艺,开发了一种有源单端30至60 GHz倍频/功率放大器链MMIC,它需要低输入驱动功率,产生高输出功率,具有高基波抑制,无需外部滤波器。最大转换增益为17 dB,基频抑制为-25 dB,在59gh输出频率下饱和输出功率为19 dBm。讨论了封装和互连,并提出了使用首尔大学的MCM-D(多芯片模块)基板进行倒装芯片安装测试,作为线键合的替代方法。测试结果表明,所提出的MMIC和倒装芯片技术特别适合于60 GHz无线通信系统。
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60 GHz flip-chip mounted frequency doubler/PA chain MMIC with low input power and high output power
An active single-ended 30 to 60 GHz doubler/power amplifier chain MMIC based on a commercial 0.15 um GaAs pHEMT process has been developed that requires low input drive power and produces high output power with high fundamental suppression without external filter. The maximum conversion gain is 17 dB with -25 dB fundamental signal suppression and saturated output power is 19 dBm at 59 GH output frequency. Packaging and interconnects are discussed and as a alternative to wire bonding, flip-chip mounting test with SNU's MCM-D (multi-chip module) substrate are presented. These test indicate that the presented MMIC and this flip- chip technologies are especially well suited for the 60 GHz wireless communication systems.
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