直接调制高功率半导体光放大器

2018 International Topical Meeting on Microwave Photonics (MWP) Pub Date : 2018-10-01 DOI:10.1109/MWP.2018.8552859

F. Duport, Carmen Gomez, C. Fortin, C. Pham, Jean-Francois Paret, K. Mekhazni, R. Brenot, A. Garreau, F. van Dijk

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引用次数: 2

摘要

高功率半导体光放大器(SOA)用于光学系统中，如锁模激光器(MLL)作为增益介质，或者当它们与DFB激光器单片集成时，用于主振荡器功率放大器(MOPA)。在这两种应用中，SOA输入端的光功率都相当大(从1毫瓦到几毫瓦)，导致器件中的增益饱和。我们在这里提出了一个实验研究谐波制度的饱和高功率SOA。测量了两种情况下的电光参数，并提出了两种情况下的模型:调制作用于两段高功率SOA的输入端或输出端。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Directly modulated high power semiconductor optical amplifier

High power Semiconductor Optical Amplifiers (SOA) are used in optical systems such as Mode Locked Lasers (MLL) as gain medium, or in Master Oscillator Power Amplifiers (MOPA) when they are monolithically integrated with a DFB Laser. In both applications, the optical power at the input of the SOA is rather large (from 1 to few 10th of mW) leading to gain saturation in the device. We present here an experimental study of the harmonic regime for a saturated high power SOA. The electro-optic parameters are measured and a model is proposed in two configurations: when the modulation is applied at the input or at the output of a two section high power SOA.

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2018 International Topical Meeting on Microwave Photonics (MWP)

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