Charge Plasma Based VVD-SJ VDMOS Employing Reversed Doping Concentration

In this paper, a novel device utilizing hafnium and platinum as contact metals is proposed. Electron plasma is induced under source and drain region and hole plasma is created for body. The doping concentration of the proposed device is in decreasing order for N pillar and it is observed that the device show better properties. Simulation results of the reported and the proposed device has been analyzed and compared. It has been shown that the device offer increased drain current density without any degradation in breakdown voltage. The behavior of both the devices under breakdown regime is analyzed and it is shown that proposed device behave similar to the reported device.