2.3 μm GaSb二极管激光器与Si平台单片集成无源波导的光耦合分析

2022 IEEE Photonics Conference (IPC) Pub Date : 2022-11-01 DOI:10.1109/IPC53466.2022.9975716

Michele Paparella, Laura Monge Barlome, Jean‐baptiste Rodriguez, L. Cerutti, M. Grande, L. O’Faolain, É. Tournié

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引用次数: 1

摘要

虽然在硅上生长的分立激光器已经被证明，但光耦合到片上无源波导仍然需要适当的研究。从理论上研究了在硅光子芯片上外延生长的2.3 μm gasb基二极管激光器与无源波导之间的光耦合。

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Analysis of the optical coupling between 2.3 μm GaSb diode lasers and passive waveguides for monolithic integration on Si platforms

Although discrete lasers grown on silicon have been demonstrated, light coupling into on-chip passive waveguides remains to be properly studied. We investigate theoretically the optical coupling between 2.3 μm GaSb-based diode lasers (DLs) epitaxially grown on a Silicon photonic chip and the passive waveguides.

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2022 IEEE Photonics Conference (IPC)

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