{"title":"正面照明下量子点晶体管的光学响应","authors":"V. Vijayakumar, R. Seshasayanan","doi":"10.1109/RSTSCC.2010.5712862","DOIUrl":null,"url":null,"abstract":"The theoretical work for the DC performance of Quantum Dot Transistor under Front side illumination is presented. A device structure consist of Quantum Dots in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I–V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been evaluated, plotted and discussed.","PeriodicalId":254761,"journal":{"name":"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optical response of Quantum Dot Transistor with front side illumination\",\"authors\":\"V. Vijayakumar, R. Seshasayanan\",\"doi\":\"10.1109/RSTSCC.2010.5712862\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The theoretical work for the DC performance of Quantum Dot Transistor under Front side illumination is presented. A device structure consist of Quantum Dots in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I–V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been evaluated, plotted and discussed.\",\"PeriodicalId\":254761,\"journal\":{\"name\":\"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSTSCC.2010.5712862\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSTSCC.2010.5712862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical response of Quantum Dot Transistor with front side illumination
The theoretical work for the DC performance of Quantum Dot Transistor under Front side illumination is presented. A device structure consist of Quantum Dots in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I–V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been evaluated, plotted and discussed.
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