“酷低功耗”1 GHz多端口寄存器文件和动态锁存器在1.8 V, 0.25 /spl mu/m SOI和批量技术

R. Joshi, W. Hwang, S.C. Wilson, C. Chuang
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摘要

本文描述了一个高性能动态多端口寄存器文件(6个读和2个写端口,32个字行/spl次/64位行)在0.25 /spl mu/m绝缘体上硅(SOI)和批量技术制造的零下温度下的功率分析。基于硬件的研究表明,温度每降低10/spl℃,寄存器文件和锁存器的性能都提高2-3.5%。温度每降低10/spl℃至-30/spl℃,SOI的待机功率降低1.5% ~ 3%。由于浮体效应部分抵消了阈值电压(Vt)的增加,SOI芯片在低温下比本体芯片具有更显著的性能改进。低温性能增益归因于电容的减少(约7-8%),其余是由于动态阈值电压。在-30/spl度/C下,寄存器文件能够在一个周期内运行接近1.02 GHz的读写操作。
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"Cool low power" 1 GHz multi-port register file and dynamic latch in 1.8 V, 0.25 /spl mu/m SOI and bulk technology
This paper describes power analysis at sub-zero temperatures for a high performance dynamic multiport register file (6 Read and 2 Write ports, 32 wordlines/spl times/64 bitlines) fabricated in 0.25 /spl mu/m Silicon on Insulator (SOI) and bulk technologies. Based on the hardware it is shown that the performance of both register file and latch improves by 2-3.5% per 10/spl deg/C reduction in temperature. The standby power for SOI reduces by 1.5% to 3% per 10/spl deg/C temperature drop down to -30/spl deg/C. The SOI chip is shown to have more significant performance improvement at low temperatures compared to bulk chip due to the floating body effect which partially offsets the increase in the threshold voltages (Vt). The low temperature performance gain is attributed to reduction in capacitance (around 7-8%) and rest is due to dynamic threshold voltages. At -30/spl deg/C the register file is capable of functioning close to 1.02 GHz for read and write operations in a single cycle.
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