利用AVL技术实现高性能低漏半减码器电路

S. Akashe, G. Sharma, V. Rajak, R. Pandey
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引用次数: 6

摘要

在本文中,我们提出了一种减少泄漏的技术,因为深亚微米区域的高泄漏电流正在成为CMOS电路总功耗的主要贡献者。为了降低亚阈值泄漏电流,提出了一种自适应电压电平(AVL)技术。在待机模式下优化整个半减法电路的总电压。在AVL技术中,采用了两种方案,一种是降低电源电压的AVLS(自适应电压电平)方案,另一种是提高地电位的AVLG(自适应电压电平)方案。通过应用这种技术,我们将泄漏电流从9.274*10-12安培降低到5.428*10-12安培。这意味着该技术的漏电流为41.4%。该电路在Cadence(R) Virtuoso(R)上采用45纳米CMOS技术进行仿真。仿真结果表明,AVL电路降低了电源电压,大大降低了电池的漏电流。
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Implementation of high performance and low leakage half subtractor circuit using AVL technique
In this paper, we propose a leakage reduction technique as high leakage currents in deep submicron regimes are becoming a major contributor to total power dissipation of CMOS circuits. Sub threshold leakage current plays a very important role in power dissipation so to reduce the sub threshold leakage current we proposed an adaptive voltage level (AVL) technique. Which optimize the overall voltage across the half subtractor circuit in standby mode. In this AVL technique, two schemes are employed, one is AVLS (adaptive voltage level at supply) in which the supply voltage is reduced and the other is AVLG (adaptive voltage level at ground) in which the ground potential is increased. By applying this technique we have reduced the leakage current from 9.274*10-12ampere) to 5.428*10-12amp. That means this technique the leakage current 41.4%. The circuit is simulated on Cadence(R) Virtuoso(R) in 45nano meter CMOS technology. Simulation results reveal that there is a significant reduction in leakage current for this proposed cell with the AVL circuit reducing the supply voltage.
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