{"title":"提高了厚的、完全耗尽的ccd的空间分辨率,增强了红色灵敏度","authors":"J. Fairfield","doi":"10.1109/NSSMIC.2005.1596437","DOIUrl":null,"url":null,"abstract":"The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it can affect use in imaging and spectroscopic applications. We present new data and theoretical developments in the study of lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they are fully depleted, the LBNL devices have no field-free region, and diffusion can be controlled through the application of an external bias voltage. We give results for a 3512times3512 format, 10.5 mum pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7plusmn0.2 mum. Lateral charge diffusion in LBNL CCDs is thus expected to meet the SNAP requirements","PeriodicalId":105619,"journal":{"name":"IEEE Nuclear Science Symposium Conference Record, 2005","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Improved spatial resolution in thick, fully-depleted CCDs with enhanced red sensitivity\",\"authors\":\"J. Fairfield\",\"doi\":\"10.1109/NSSMIC.2005.1596437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it can affect use in imaging and spectroscopic applications. We present new data and theoretical developments in the study of lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they are fully depleted, the LBNL devices have no field-free region, and diffusion can be controlled through the application of an external bias voltage. We give results for a 3512times3512 format, 10.5 mum pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7plusmn0.2 mum. Lateral charge diffusion in LBNL CCDs is thus expected to meet the SNAP requirements\",\"PeriodicalId\":105619,\"journal\":{\"name\":\"IEEE Nuclear Science Symposium Conference Record, 2005\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Nuclear Science Symposium Conference Record, 2005\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.2005.1596437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Nuclear Science Symposium Conference Record, 2005","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.2005.1596437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved spatial resolution in thick, fully-depleted CCDs with enhanced red sensitivity
The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it can affect use in imaging and spectroscopic applications. We present new data and theoretical developments in the study of lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they are fully depleted, the LBNL devices have no field-free region, and diffusion can be controlled through the application of an external bias voltage. We give results for a 3512times3512 format, 10.5 mum pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7plusmn0.2 mum. Lateral charge diffusion in LBNL CCDs is thus expected to meet the SNAP requirements