H. Zou, Jiachou Wang, Fang Chen, Haifei Bao, Xinxin Li
{"title":"采用(111)晶圆单面工艺制备的单片三轴悬臂式高冲击加速度计","authors":"H. Zou, Jiachou Wang, Fang Chen, Haifei Bao, Xinxin Li","doi":"10.1109/TRANSDUCERS.2017.7994236","DOIUrl":null,"url":null,"abstract":"Single-sided fabricated monolithic tri-axis piezoresistive high-shock accelerometers are reported in this paper. A single-cantilever structure and two dual-cantilever structures are designed and employed to detect the Z-axis and X-/Y-axis high-shock accelerations, respectively. Different longitudinal dimensions of the cantilevers can be achieved and well controlled with a (111) wafer single-sided process. The remained smooth backside facilitates simple post-packaging without chip bonding. The results of the high shock test show the sensitivity of X-/Y-axis and Z-axis is 0.80–0.85 μV/g and 1.36 μV/g, respectively. The proposed single-sided process is also promising to fabricate other complex structures with different longitudinal sizes.","PeriodicalId":174774,"journal":{"name":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic tri-axis cantilever high-shock accelerometers fabricated with a single-sided process in (111) wafers\",\"authors\":\"H. Zou, Jiachou Wang, Fang Chen, Haifei Bao, Xinxin Li\",\"doi\":\"10.1109/TRANSDUCERS.2017.7994236\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-sided fabricated monolithic tri-axis piezoresistive high-shock accelerometers are reported in this paper. A single-cantilever structure and two dual-cantilever structures are designed and employed to detect the Z-axis and X-/Y-axis high-shock accelerations, respectively. Different longitudinal dimensions of the cantilevers can be achieved and well controlled with a (111) wafer single-sided process. The remained smooth backside facilitates simple post-packaging without chip bonding. The results of the high shock test show the sensitivity of X-/Y-axis and Z-axis is 0.80–0.85 μV/g and 1.36 μV/g, respectively. The proposed single-sided process is also promising to fabricate other complex structures with different longitudinal sizes.\",\"PeriodicalId\":174774,\"journal\":{\"name\":\"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2017.7994236\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2017.7994236","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic tri-axis cantilever high-shock accelerometers fabricated with a single-sided process in (111) wafers
Single-sided fabricated monolithic tri-axis piezoresistive high-shock accelerometers are reported in this paper. A single-cantilever structure and two dual-cantilever structures are designed and employed to detect the Z-axis and X-/Y-axis high-shock accelerations, respectively. Different longitudinal dimensions of the cantilevers can be achieved and well controlled with a (111) wafer single-sided process. The remained smooth backside facilitates simple post-packaging without chip bonding. The results of the high shock test show the sensitivity of X-/Y-axis and Z-axis is 0.80–0.85 μV/g and 1.36 μV/g, respectively. The proposed single-sided process is also promising to fabricate other complex structures with different longitudinal sizes.