3D NAND闪存中的加速子块擦除

H. Gong, Zhirong Shen, J. Shu
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引用次数: 1

摘要

3D闪存消除了平面闪存的可扩展性限制,但由于“大块问题”,它仍然受到繁琐的GC过程的困扰。在本文中,我们提出了SpeedupGC,这是一个将数据更新特征整合到现有子块擦除设计中的框架。SpeedupGC的主要思想是将热更新的数据引导到即将被擦除的块中,从而推测产生更多的无效页面并抑制重定位开销。我们进行了大量的跟踪驱动实验,结果表明,与最先进的设计相比,SpeedupGC平均可以减少64.7%的GC延迟、21.8%的读延迟、17.7%的写延迟和11.5%的写放大。
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Accelerating Sub-Block Erase in 3D NAND Flash Memory
3D flash memory removes scaling limitations of planar flash memory, yet it is still plagued by the tedious GC process due to the “big block problem”. In this paper, we propose SpeedupGC, a framework that incorporates the characteristics of data updates into existing sub-block erase designs. The main idea of SpeedupGC is to guide the hotly-updated data to the blocks that are about to be erased, so as to speculatively produce more invalid pages and suppress the relocation overhead. We conduct extensive trace-driven experiments, showing that SpeedupGC can averagely reduce 64.7% of the GC latency, 21.8% of the read latency, 17.7% of the write latency, and 11.5% of the write amplification when compared to state-of-the-art designs.
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