宽带放大器设计中的有界性能技术

K. Tran, R. Henderson
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引用次数: 2

摘要

本文提出了一种利用负载-拉数据进行宽带功率放大器设计的新技术,作为简化实频技术(SRFT)的替代方案。与SRFT一样,有界性能(BP)技术在跨越工作带宽的许多离散频率上优化匹配网络。与SRFT不同的是,BP通过设计规范和负载-拉力数据来优化Smith图区域的匹配。从这个方面,我们推导出一个简单的成本函数来优化匹配网络。该技术缓解了宽带点匹配的问题,即物理上可实现的匹配网络无法在宽频率范围内跟踪功率晶体管的最佳反射系数轨迹。它还将设计规范纳入优化成本函数的制定中,从而确保设计满足要求的性能。采用15w Qorvo GaN HEMT塑料器件和BP技术,设计并构建了c波段4 - 5ghz放大器。我们测量了5个首通放大器的平均18w输出功率和56%漏极效率。测试结果显示,在平均输出功率为32.5 dBm时,使用20 mhz LTE信号且无预失真的1个放大器,最大相邻通道功率比为- 38.5 dBc,最大备用功率通道比为- 49 dBc,或从饱和状态后退9 dB。
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Bounded performance technique for broadband amplifier design
In this paper we propose a new technique to use load-pull data for broadband power amplifier design as an alternative to the simplified real frequency technique (SRFT). Like SRFT the bounded performance (BP) technique optimizes a matching network over many discrete frequencies that span the operating bandwidth. Unlike SRFT, BP optimizes the match over a Smith chart area defined by design specifications and load-pull data. From this area, we deduce a simple cost function for optimizing the matching network. The technique alleviates the problem with broadband point matching, where a physically realizable matching network cannot trace the trajectory of the optimal reflection coefficients of a power transistor over a wide frequency range. It also includes design specifications into the formulation of the optimization cost function, thus ensuring the design will meet the required performance. Using a 15-W Qorvo GaN HEMT plastic device and BP technique, we designed and built a C-band 4–5 GHz amplifier. We measured on average 18-W output power and 56% drain efficiency from 5 first-pass amplifiers. Results from testing 1 amplifier with 20-MHz LTE signal and without pre-distortion showed maximum adjacent channel power ratio of −38.5 dBc and maximum alternate power channel ratio of −49 dBc at up to 32.5 dBm average output power, or 9 dB back-off from saturation.
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