{"title":"宽带放大器设计中的有界性能技术","authors":"K. Tran, R. Henderson","doi":"10.1109/WMCAS.2018.8400650","DOIUrl":null,"url":null,"abstract":"In this paper we propose a new technique to use load-pull data for broadband power amplifier design as an alternative to the simplified real frequency technique (SRFT). Like SRFT the bounded performance (BP) technique optimizes a matching network over many discrete frequencies that span the operating bandwidth. Unlike SRFT, BP optimizes the match over a Smith chart area defined by design specifications and load-pull data. From this area, we deduce a simple cost function for optimizing the matching network. The technique alleviates the problem with broadband point matching, where a physically realizable matching network cannot trace the trajectory of the optimal reflection coefficients of a power transistor over a wide frequency range. It also includes design specifications into the formulation of the optimization cost function, thus ensuring the design will meet the required performance. Using a 15-W Qorvo GaN HEMT plastic device and BP technique, we designed and built a C-band 4–5 GHz amplifier. We measured on average 18-W output power and 56% drain efficiency from 5 first-pass amplifiers. Results from testing 1 amplifier with 20-MHz LTE signal and without pre-distortion showed maximum adjacent channel power ratio of −38.5 dBc and maximum alternate power channel ratio of −49 dBc at up to 32.5 dBm average output power, or 9 dB back-off from saturation.","PeriodicalId":254840,"journal":{"name":"2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Bounded performance technique for broadband amplifier design\",\"authors\":\"K. Tran, R. Henderson\",\"doi\":\"10.1109/WMCAS.2018.8400650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we propose a new technique to use load-pull data for broadband power amplifier design as an alternative to the simplified real frequency technique (SRFT). Like SRFT the bounded performance (BP) technique optimizes a matching network over many discrete frequencies that span the operating bandwidth. Unlike SRFT, BP optimizes the match over a Smith chart area defined by design specifications and load-pull data. From this area, we deduce a simple cost function for optimizing the matching network. The technique alleviates the problem with broadband point matching, where a physically realizable matching network cannot trace the trajectory of the optimal reflection coefficients of a power transistor over a wide frequency range. It also includes design specifications into the formulation of the optimization cost function, thus ensuring the design will meet the required performance. Using a 15-W Qorvo GaN HEMT plastic device and BP technique, we designed and built a C-band 4–5 GHz amplifier. We measured on average 18-W output power and 56% drain efficiency from 5 first-pass amplifiers. Results from testing 1 amplifier with 20-MHz LTE signal and without pre-distortion showed maximum adjacent channel power ratio of −38.5 dBc and maximum alternate power channel ratio of −49 dBc at up to 32.5 dBm average output power, or 9 dB back-off from saturation.\",\"PeriodicalId\":254840,\"journal\":{\"name\":\"2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMCAS.2018.8400650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMCAS.2018.8400650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bounded performance technique for broadband amplifier design
In this paper we propose a new technique to use load-pull data for broadband power amplifier design as an alternative to the simplified real frequency technique (SRFT). Like SRFT the bounded performance (BP) technique optimizes a matching network over many discrete frequencies that span the operating bandwidth. Unlike SRFT, BP optimizes the match over a Smith chart area defined by design specifications and load-pull data. From this area, we deduce a simple cost function for optimizing the matching network. The technique alleviates the problem with broadband point matching, where a physically realizable matching network cannot trace the trajectory of the optimal reflection coefficients of a power transistor over a wide frequency range. It also includes design specifications into the formulation of the optimization cost function, thus ensuring the design will meet the required performance. Using a 15-W Qorvo GaN HEMT plastic device and BP technique, we designed and built a C-band 4–5 GHz amplifier. We measured on average 18-W output power and 56% drain efficiency from 5 first-pass amplifiers. Results from testing 1 amplifier with 20-MHz LTE signal and without pre-distortion showed maximum adjacent channel power ratio of −38.5 dBc and maximum alternate power channel ratio of −49 dBc at up to 32.5 dBm average output power, or 9 dB back-off from saturation.