Masafumi Kazuno, M. Motoyoshi, S. Kameda, N. Suematsu
{"title":"18.6 GHz锁定范围,60 GHz波段变容调谐注入锁定分频器,65nm CMOS","authors":"Masafumi Kazuno, M. Motoyoshi, S. Kameda, N. Suematsu","doi":"10.1109/GSMM.2017.7970297","DOIUrl":null,"url":null,"abstract":"A 60 GHz band injection locked tunable dynamic frequency divider has been developed in 65 nm CMOS. By varying the bias voltage of varactor diodes in LC tank circuit of the dynamic divider, the fabricated CMOS RFIC performs the widest operational frequency range of 18.6 GHz (relative bandwidth of 34.5 %) at VDD = 1 V and the highest FoM at VDD = 0.5 V in 60 GHz band.","PeriodicalId":414423,"journal":{"name":"2017 10th Global Symposium on Millimeter-Waves","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 18.6 GHz locking range, 60 GHz band varactor-tuned injection locked frequency divider in 65 nm CMOS\",\"authors\":\"Masafumi Kazuno, M. Motoyoshi, S. Kameda, N. Suematsu\",\"doi\":\"10.1109/GSMM.2017.7970297\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 60 GHz band injection locked tunable dynamic frequency divider has been developed in 65 nm CMOS. By varying the bias voltage of varactor diodes in LC tank circuit of the dynamic divider, the fabricated CMOS RFIC performs the widest operational frequency range of 18.6 GHz (relative bandwidth of 34.5 %) at VDD = 1 V and the highest FoM at VDD = 0.5 V in 60 GHz band.\",\"PeriodicalId\":414423,\"journal\":{\"name\":\"2017 10th Global Symposium on Millimeter-Waves\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 10th Global Symposium on Millimeter-Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GSMM.2017.7970297\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 10th Global Symposium on Millimeter-Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2017.7970297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 18.6 GHz locking range, 60 GHz band varactor-tuned injection locked frequency divider in 65 nm CMOS
A 60 GHz band injection locked tunable dynamic frequency divider has been developed in 65 nm CMOS. By varying the bias voltage of varactor diodes in LC tank circuit of the dynamic divider, the fabricated CMOS RFIC performs the widest operational frequency range of 18.6 GHz (relative bandwidth of 34.5 %) at VDD = 1 V and the highest FoM at VDD = 0.5 V in 60 GHz band.