Characterization of GaN-based quantum dots within vertical-cavity surface-emitting lasers for realizing green lasers by simulations

The GaN-based green lasers play an important role in optoelectronic innovation. Multi quantum wells and quantum dots within a quantum well have been characterized. The polarization, effective mass, subbands and optical gain have been taken into account. The rigorous k·p-method with Hamiltonian (8 by 8) is applied. The electrical and optical effect have also been compared in order to reach optimal design for green or yellow-green lasers. The piezoelectric effect is also included in simulation. Thus, it is a step ahead in optimizing such complex laser structures.