以pn控制结作为电流放大器的场效应晶体管上光电二极管和光接收器件的数学模型

2007 3rd IEEE/IFIP International Conference in Central Asia on Internet Pub Date : 2007-09-01 DOI:10.1109/CANET.2007.4401699

N. Yunusov, R.K. Atametov, S. Yuldasheva

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摘要

本文提出了以p-n控制结作为电流放大器的场效应晶体管上模拟光电二极管和光接收器件特性的量比作为输入光辐射的幂函数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier

The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.

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2007 3rd IEEE/IFIP International Conference in Central Asia on Internet

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