球形非均匀量子点中的约束效应和激子的稳定性

F. Benhaddou, I. Zorkani, A. Jorio
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引用次数: 5

摘要

本文研究了球面非均匀量子点中激子的量子约束效应。球核被两个壳层包围。内壳是具有小带隙特征的半导体。核心和外壳是相同的半导体,其特点是带隙大。因此,有一个显著的间隙偏移产生了一个深势阱,激子被定位和强烈限制。我们采用Ritz变分方法,数值计算了强、中、低约束区激子基态能及其结合能。结果表明,在强约束条件下,Ritz变分方法与微扰方法具有较好的一致性。存在双重约束效应和双重控制。计算检验了体块半导体在厚度取很大值时的渐近极限处的有效Rydberg R*。激子的结合能增加,从而使激子具有较高的稳定性。
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The Confinement Effect in Spherical Inhomogeneous Quantum Dots and Stability of Excitons
We investigate in this work the quantum confinement effect of exciton in spherical inhomogeneous quantum dots IQDs. The spherical core is enveloped by two shells. The inner shell is a semiconductor characterized by a small band-gap. The core and the outer shell are the same semiconductor characterized by a large band-gap. So there is a significant gap-offset creating a deep potential well where the excitons are localized and strongly confined. We have adopted the Ritz variational method to calculate numerically the excitonic ground state energy and its binding energy in the strong, moderate and low confinement regimes. The results show that the Ritz variational method is in good agreement with the perturbation method in strong confinement. There is a double confinement effect and dual control. The calculation checks the effective Rydberg R* at the asymptotic limit of bulk semiconductor when the thickness takes very large values. The excitonic binding energy increases, Thus giving the excitons a high stabi...
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