一种用于100W l波段雷达的新型硅高压垂直MOSFET技术

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EUMC.2008.4751736

B. Battaglia, D. Rice, P. Le, B. Gogoi, G. Hoshizaki, M. Purchine, R. Davies, W. Wright, D. Lutz, M. Gao, D. Moline, A. Elliot, S. Tran, R. Neeley

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引用次数: 3

摘要

本文所述的硅垂直MOSFET射频功率放大器是业界首次采用高压垂直技术。在200 μ m脉冲宽度和10%占空比的脉冲条件下工作，它提供超过100 W的峰值功率。该器件工作在AB类，只有50 mA的偏置电流，在1.2 GHz至1.4 GHz的l波段200 MHz带宽下，在P 1 dB压缩下实现超过20 dB的增益和47%的功率增加效率。直流特性包括115伏的bvds，可以在48 V电源下进行高压操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Novel Silicon High Voltage Vertical MOSFET Technology for a 100W L-Band Radar Application

The silicon vertical MOSFET RF power amplifier described in this paper is the industry's first to utilize high voltage vertical technology. Operating under pulse conditions of 200 musec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in Class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P 1 dB compression across 200 MHz of bandwidth at L-Band from 1.2 GHz to 1.4 GHz. The DC characteristics include a BVdss of 115 volts enabling high voltage operation with a 48 V power supply.

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2008 European Microwave Integrated Circuit Conference

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