硬件环境下STT-RAM寄存器结构的管道优化

Zhiyao Gong, Keni Qiu, Weiwen Chen, Yuanhui Ni, Yuanchao Xu, Jianlei Yang
{"title":"硬件环境下STT-RAM寄存器结构的管道优化","authors":"Zhiyao Gong, Keni Qiu, Weiwen Chen, Yuanhui Ni, Yuanchao Xu, Jianlei Yang","doi":"10.1109/Trustcom/BigDataSE/ICESS.2017.321","DOIUrl":null,"url":null,"abstract":"Electromagnetic radiation effects can cause several types of errors on traditional SRAM-based registers such as single event upset (SEU) and single event functional interrupt (SEFI). Especially in aerospace where radiation is quite intense, the stability and correctness of systems are greatly affected. By exploiting the beneficial features of high radiation resistance and non-volatility, spin-transfer torque RAM (STT-RAM), a kind of emerging nonvolatile memory (NVM), is promising to be used as registers to avoid errors caused by radiation. However, substituting SRAM with STT-RAM in registers will affect system performance because STT-RAM suffers from long write latency. The early write termination (EWT) method has been accepted as an effective technique to mitigate write problems by terminating redundant writes. Based on the above background, this paper proposes to build registers by STT-RAM for embedded systems in rad-hard environment. Targeting the microarchitecture level of pipeline, the impact of architecting STT-RAM-based registers is discussed considering data hazard due to data dependencies. Furthermore, integrated with the EWT technique, a Read Merging method is proposed to eliminate redundant normal reads or sensing reads which are conducted along with a write. As a result of carrying out these actions, the energy and performance can be improved greatly. The results report 68% (and 75%) and 32% (and 39%) improvements on performance (and energy) by the proposed Read Merging method compared to the cases where STT-RAM is naively used as registers and intelligently used by integrating EWT, respectively.","PeriodicalId":170253,"journal":{"name":"2017 IEEE Trustcom/BigDataSE/ICESS","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pipeline Optimizations of Architecting STT-RAM as Registers in Rad-Hard Environment\",\"authors\":\"Zhiyao Gong, Keni Qiu, Weiwen Chen, Yuanhui Ni, Yuanchao Xu, Jianlei Yang\",\"doi\":\"10.1109/Trustcom/BigDataSE/ICESS.2017.321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromagnetic radiation effects can cause several types of errors on traditional SRAM-based registers such as single event upset (SEU) and single event functional interrupt (SEFI). Especially in aerospace where radiation is quite intense, the stability and correctness of systems are greatly affected. By exploiting the beneficial features of high radiation resistance and non-volatility, spin-transfer torque RAM (STT-RAM), a kind of emerging nonvolatile memory (NVM), is promising to be used as registers to avoid errors caused by radiation. However, substituting SRAM with STT-RAM in registers will affect system performance because STT-RAM suffers from long write latency. The early write termination (EWT) method has been accepted as an effective technique to mitigate write problems by terminating redundant writes. Based on the above background, this paper proposes to build registers by STT-RAM for embedded systems in rad-hard environment. Targeting the microarchitecture level of pipeline, the impact of architecting STT-RAM-based registers is discussed considering data hazard due to data dependencies. Furthermore, integrated with the EWT technique, a Read Merging method is proposed to eliminate redundant normal reads or sensing reads which are conducted along with a write. As a result of carrying out these actions, the energy and performance can be improved greatly. The results report 68% (and 75%) and 32% (and 39%) improvements on performance (and energy) by the proposed Read Merging method compared to the cases where STT-RAM is naively used as registers and intelligently used by integrating EWT, respectively.\",\"PeriodicalId\":170253,\"journal\":{\"name\":\"2017 IEEE Trustcom/BigDataSE/ICESS\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Trustcom/BigDataSE/ICESS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/Trustcom/BigDataSE/ICESS.2017.321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Trustcom/BigDataSE/ICESS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/Trustcom/BigDataSE/ICESS.2017.321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

电磁辐射效应会对传统的基于sram的寄存器造成几种类型的错误,如单事件中断(SEU)和单事件功能中断(SEFI)。特别是在辐射强度较大的航空航天环境中,系统的稳定性和正确性受到很大影响。作为一种新兴的非易失性存储器(NVM), STT-RAM (spin-transfer torque RAM)利用其高抗辐射性和非易失性的优点,有望用作寄存器,避免辐射引起的错误。然而,用寄存器中的STT-RAM代替SRAM会影响系统性能,因为STT-RAM有很长的写延迟。早期写终止(EWT)方法被认为是一种通过终止冗余写来缓解写问题的有效技术。基于以上背景,本文提出了一种基于STT-RAM的嵌入式系统硬件寄存器构建方法。针对管道的微体系结构层面,讨论了基于stt - ram的寄存器体系结构的影响,考虑了由于数据依赖而产生的数据危害。在此基础上,结合EWT技术,提出了一种读合并方法,以消除在写入过程中产生的冗余正常读或感知读。通过这些行动,可以大大提高精力和性能。结果表明,与单纯使用STT-RAM作为寄存器和通过集成EWT巧妙地使用STT-RAM相比,所提出的读合并方法在性能(和能耗)方面分别提高了68%(和75%)和32%(和39%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Pipeline Optimizations of Architecting STT-RAM as Registers in Rad-Hard Environment
Electromagnetic radiation effects can cause several types of errors on traditional SRAM-based registers such as single event upset (SEU) and single event functional interrupt (SEFI). Especially in aerospace where radiation is quite intense, the stability and correctness of systems are greatly affected. By exploiting the beneficial features of high radiation resistance and non-volatility, spin-transfer torque RAM (STT-RAM), a kind of emerging nonvolatile memory (NVM), is promising to be used as registers to avoid errors caused by radiation. However, substituting SRAM with STT-RAM in registers will affect system performance because STT-RAM suffers from long write latency. The early write termination (EWT) method has been accepted as an effective technique to mitigate write problems by terminating redundant writes. Based on the above background, this paper proposes to build registers by STT-RAM for embedded systems in rad-hard environment. Targeting the microarchitecture level of pipeline, the impact of architecting STT-RAM-based registers is discussed considering data hazard due to data dependencies. Furthermore, integrated with the EWT technique, a Read Merging method is proposed to eliminate redundant normal reads or sensing reads which are conducted along with a write. As a result of carrying out these actions, the energy and performance can be improved greatly. The results report 68% (and 75%) and 32% (and 39%) improvements on performance (and energy) by the proposed Read Merging method compared to the cases where STT-RAM is naively used as registers and intelligently used by integrating EWT, respectively.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Insider Threat Detection Through Attributed Graph Clustering SEEAD: A Semantic-Based Approach for Automatic Binary Code De-obfuscation A Public Key Encryption Scheme for String Identification Vehicle Incident Hot Spots Identification: An Approach for Big Data Implementing Chain of Custody Requirements in Database Audit Records for Forensic Purposes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1