{"title":"硬件环境下STT-RAM寄存器结构的管道优化","authors":"Zhiyao Gong, Keni Qiu, Weiwen Chen, Yuanhui Ni, Yuanchao Xu, Jianlei Yang","doi":"10.1109/Trustcom/BigDataSE/ICESS.2017.321","DOIUrl":null,"url":null,"abstract":"Electromagnetic radiation effects can cause several types of errors on traditional SRAM-based registers such as single event upset (SEU) and single event functional interrupt (SEFI). Especially in aerospace where radiation is quite intense, the stability and correctness of systems are greatly affected. By exploiting the beneficial features of high radiation resistance and non-volatility, spin-transfer torque RAM (STT-RAM), a kind of emerging nonvolatile memory (NVM), is promising to be used as registers to avoid errors caused by radiation. However, substituting SRAM with STT-RAM in registers will affect system performance because STT-RAM suffers from long write latency. The early write termination (EWT) method has been accepted as an effective technique to mitigate write problems by terminating redundant writes. Based on the above background, this paper proposes to build registers by STT-RAM for embedded systems in rad-hard environment. Targeting the microarchitecture level of pipeline, the impact of architecting STT-RAM-based registers is discussed considering data hazard due to data dependencies. Furthermore, integrated with the EWT technique, a Read Merging method is proposed to eliminate redundant normal reads or sensing reads which are conducted along with a write. As a result of carrying out these actions, the energy and performance can be improved greatly. The results report 68% (and 75%) and 32% (and 39%) improvements on performance (and energy) by the proposed Read Merging method compared to the cases where STT-RAM is naively used as registers and intelligently used by integrating EWT, respectively.","PeriodicalId":170253,"journal":{"name":"2017 IEEE Trustcom/BigDataSE/ICESS","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pipeline Optimizations of Architecting STT-RAM as Registers in Rad-Hard Environment\",\"authors\":\"Zhiyao Gong, Keni Qiu, Weiwen Chen, Yuanhui Ni, Yuanchao Xu, Jianlei Yang\",\"doi\":\"10.1109/Trustcom/BigDataSE/ICESS.2017.321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electromagnetic radiation effects can cause several types of errors on traditional SRAM-based registers such as single event upset (SEU) and single event functional interrupt (SEFI). Especially in aerospace where radiation is quite intense, the stability and correctness of systems are greatly affected. By exploiting the beneficial features of high radiation resistance and non-volatility, spin-transfer torque RAM (STT-RAM), a kind of emerging nonvolatile memory (NVM), is promising to be used as registers to avoid errors caused by radiation. However, substituting SRAM with STT-RAM in registers will affect system performance because STT-RAM suffers from long write latency. The early write termination (EWT) method has been accepted as an effective technique to mitigate write problems by terminating redundant writes. Based on the above background, this paper proposes to build registers by STT-RAM for embedded systems in rad-hard environment. Targeting the microarchitecture level of pipeline, the impact of architecting STT-RAM-based registers is discussed considering data hazard due to data dependencies. Furthermore, integrated with the EWT technique, a Read Merging method is proposed to eliminate redundant normal reads or sensing reads which are conducted along with a write. As a result of carrying out these actions, the energy and performance can be improved greatly. The results report 68% (and 75%) and 32% (and 39%) improvements on performance (and energy) by the proposed Read Merging method compared to the cases where STT-RAM is naively used as registers and intelligently used by integrating EWT, respectively.\",\"PeriodicalId\":170253,\"journal\":{\"name\":\"2017 IEEE Trustcom/BigDataSE/ICESS\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Trustcom/BigDataSE/ICESS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/Trustcom/BigDataSE/ICESS.2017.321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Trustcom/BigDataSE/ICESS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/Trustcom/BigDataSE/ICESS.2017.321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pipeline Optimizations of Architecting STT-RAM as Registers in Rad-Hard Environment
Electromagnetic radiation effects can cause several types of errors on traditional SRAM-based registers such as single event upset (SEU) and single event functional interrupt (SEFI). Especially in aerospace where radiation is quite intense, the stability and correctness of systems are greatly affected. By exploiting the beneficial features of high radiation resistance and non-volatility, spin-transfer torque RAM (STT-RAM), a kind of emerging nonvolatile memory (NVM), is promising to be used as registers to avoid errors caused by radiation. However, substituting SRAM with STT-RAM in registers will affect system performance because STT-RAM suffers from long write latency. The early write termination (EWT) method has been accepted as an effective technique to mitigate write problems by terminating redundant writes. Based on the above background, this paper proposes to build registers by STT-RAM for embedded systems in rad-hard environment. Targeting the microarchitecture level of pipeline, the impact of architecting STT-RAM-based registers is discussed considering data hazard due to data dependencies. Furthermore, integrated with the EWT technique, a Read Merging method is proposed to eliminate redundant normal reads or sensing reads which are conducted along with a write. As a result of carrying out these actions, the energy and performance can be improved greatly. The results report 68% (and 75%) and 32% (and 39%) improvements on performance (and energy) by the proposed Read Merging method compared to the cases where STT-RAM is naively used as registers and intelligently used by integrating EWT, respectively.