γ辐射对90Bi2Te3-10Bi2Se3掺杂p型和n型电导率薄膜光学和电性能的影响

Int. J. Chemoinformatics Chem. Eng. Pub Date : 1900-01-01 DOI:10.4018/ijcce.2013010101

N. M. Abdullayev, Faig Bakhman Ogli Naghiyev, N. Z. Jalilov, N. R. Memmedov, I. T. Mamedova

{"title":"γ辐射对90Bi2Te3-10Bi2Se3掺杂p型和n型电导率薄膜光学和电性能的影响","authors":"N. M. Abdullayev, Faig Bakhman Ogli Naghiyev, N. Z. Jalilov, N. R. Memmedov, I. T. Mamedova","doi":"10.4018/ijcce.2013010101","DOIUrl":null,"url":null,"abstract":"There has been investigated the influence of ?-radiation on absorption spectra in energy range 1A·6.5 eV and temperature dependence of 90Bi2Te3-10Bi2Se3 film conductivity of p-and n-types conductivity within 1A·5 eV. It is established that ?-irradiation of films with intensity ?=1.384 rad/sec brings about the formation of temporary lattice defects.","PeriodicalId":132974,"journal":{"name":"Int. J. Chemoinformatics Chem. Eng.","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Influence of γ-Radiation on Optical and Electric Properties of 90Bi2Te3-10Bi2Se3 Doped Films of P-and N-Types Conductivity\",\"authors\":\"N. M. Abdullayev, Faig Bakhman Ogli Naghiyev, N. Z. Jalilov, N. R. Memmedov, I. T. Mamedova\",\"doi\":\"10.4018/ijcce.2013010101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There has been investigated the influence of ?-radiation on absorption spectra in energy range 1A·6.5 eV and temperature dependence of 90Bi2Te3-10Bi2Se3 film conductivity of p-and n-types conductivity within 1A·5 eV. It is established that ?-irradiation of films with intensity ?=1.384 rad/sec brings about the formation of temporary lattice defects.\",\"PeriodicalId\":132974,\"journal\":{\"name\":\"Int. J. Chemoinformatics Chem. Eng.\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Int. J. Chemoinformatics Chem. Eng.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4018/ijcce.2013010101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Int. J. Chemoinformatics Chem. Eng.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4018/ijcce.2013010101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

研究了-辐射对1A·6.5 eV能量范围内90Bi2Te3-10Bi2Se3薄膜电导率的影响，以及1A·5 eV范围内p型和n型电导率的温度依赖性。结果表明，辐照强度为?=1.384 rad/sec的薄膜会形成暂时的晶格缺陷。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Influence of γ-Radiation on Optical and Electric Properties of 90Bi2Te3-10Bi2Se3 Doped Films of P-and N-Types Conductivity

There has been investigated the influence of ?-radiation on absorption spectra in energy range 1A·6.5 eV and temperature dependence of 90Bi2Te3-10Bi2Se3 film conductivity of p-and n-types conductivity within 1A·5 eV. It is established that ?-irradiation of films with intensity ?=1.384 rad/sec brings about the formation of temporary lattice defects.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Int. J. Chemoinformatics Chem. Eng.

自引率

0.00%

发文量