Jeffrey S. Glenn, Mary E. Case, David L. Harame, B. Meyerson, R. Poisson
{"title":"采用可制造的Si/SiGe外延基双极技术的12ghz Gilbert混频器","authors":"Jeffrey S. Glenn, Mary E. Case, David L. Harame, B. Meyerson, R. Poisson","doi":"10.1109/BIPOL.1995.493894","DOIUrl":null,"url":null,"abstract":"We present Gilbert mixer circuits, fabricated with an epitaxial-base Si/SiGe bipolar technology, having bandwidths of up to 12 GHz and gain-bandwidth products in excess of 22 GHz.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology\",\"authors\":\"Jeffrey S. Glenn, Mary E. Case, David L. Harame, B. Meyerson, R. Poisson\",\"doi\":\"10.1109/BIPOL.1995.493894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present Gilbert mixer circuits, fabricated with an epitaxial-base Si/SiGe bipolar technology, having bandwidths of up to 12 GHz and gain-bandwidth products in excess of 22 GHz.\",\"PeriodicalId\":230944,\"journal\":{\"name\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1995.493894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology
We present Gilbert mixer circuits, fabricated with an epitaxial-base Si/SiGe bipolar technology, having bandwidths of up to 12 GHz and gain-bandwidth products in excess of 22 GHz.