{"title":"用于UMTS/WCDMA应用的GaN HEMT f类放大器","authors":"F. N. Khan, F. Mohammadi, M. Yagoub","doi":"10.1109/RFM.2008.4897420","DOIUrl":null,"url":null,"abstract":"In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.","PeriodicalId":329128,"journal":{"name":"2008 IEEE International RF and Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A GaN HEMT Class-F amplifier for UMTS/WCDMA applications\",\"authors\":\"F. N. Khan, F. Mohammadi, M. Yagoub\",\"doi\":\"10.1109/RFM.2008.4897420\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.\",\"PeriodicalId\":329128,\"journal\":{\"name\":\"2008 IEEE International RF and Microwave Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International RF and Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFM.2008.4897420\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International RF and Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFM.2008.4897420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A GaN HEMT Class-F amplifier for UMTS/WCDMA applications
In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.
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