用于近零功率射频唤醒接收机的CMOS-MEMS谐振解调器

2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2017-06-18 DOI:10.1109/TRANSDUCERS.2017.7993994

M. E. Galanko, Abhay S. Kochhar, G. Piazza, T. Mukherjee, G. Fedder

{"title":"用于近零功率射频唤醒接收机的CMOS-MEMS谐振解调器","authors":"M. E. Galanko, Abhay S. Kochhar, G. Piazza, T. Mukherjee, G. Fedder","doi":"10.1109/TRANSDUCERS.2017.7993994","DOIUrl":null,"url":null,"abstract":"We demonstrate a CMOS-MEMS resonant demodulator for use in a nanoWatt-power RF wake-up sensor. \"Near-zero\" power operation is enabled through voltage step-up and frequency keying in passive MEMS elements. The integrated MEMS demodulator minimizes parasitic capacitance to maximize gain and performs high-Q filtering to prevent false triggering due to interference signal feedthrough. High-frequency testing of a demodulator with a minimum transduction gap size of 400 nm agrees with device models.","PeriodicalId":174774,"journal":{"name":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"CMOS-MEMS resonant demodulator for near-zero-power RF wake-up receiver\",\"authors\":\"M. E. Galanko, Abhay S. Kochhar, G. Piazza, T. Mukherjee, G. Fedder\",\"doi\":\"10.1109/TRANSDUCERS.2017.7993994\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate a CMOS-MEMS resonant demodulator for use in a nanoWatt-power RF wake-up sensor. \\\"Near-zero\\\" power operation is enabled through voltage step-up and frequency keying in passive MEMS elements. The integrated MEMS demodulator minimizes parasitic capacitance to maximize gain and performs high-Q filtering to prevent false triggering due to interference signal feedthrough. High-frequency testing of a demodulator with a minimum transduction gap size of 400 nm agrees with device models.\",\"PeriodicalId\":174774,\"journal\":{\"name\":\"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2017.7993994\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2017.7993994","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

我们展示了一种用于纳米瓦功率射频唤醒传感器的CMOS-MEMS谐振解调器。通过无源MEMS元件中的电压升压和频率键控，实现“近零”功率操作。集成的MEMS解调器最小化寄生电容以最大化增益，并执行高q滤波以防止由于干扰信号馈通而导致的误触发。具有最小转导间隙尺寸为400 nm的解调器的高频测试与器件模型一致。

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CMOS-MEMS resonant demodulator for near-zero-power RF wake-up receiver

We demonstrate a CMOS-MEMS resonant demodulator for use in a nanoWatt-power RF wake-up sensor. "Near-zero" power operation is enabled through voltage step-up and frequency keying in passive MEMS elements. The integrated MEMS demodulator minimizes parasitic capacitance to maximize gain and performs high-Q filtering to prevent false triggering due to interference signal feedthrough. High-frequency testing of a demodulator with a minimum transduction gap size of 400 nm agrees with device models.

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2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

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