高灵敏度HEH监测仪

V. Senaj, D. Pastor, T. Kramer
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引用次数: 1

摘要

高压半导体在辐射下最关键的失效模式是单事件烧坏(SEB)。这种灾难性失效模式的概率与施加的偏置电压密切相关,并由重离子或高能强子(HEH)触发。大型强子对撞机(LHC)束流倾倒系统(LBDS)由50个脉冲发生器组成,工作电压高达28千伏,触发系统包含800个HV gto和480个HV igbt。所有发电机都安装在地下与大型强子对撞机隧道平行并屏蔽的通道中,但一些HEH通过相互连接的电缆管道从隧道泄漏到通道中。由于SEB引起的高压半导体故障可能导致系统故障和下游设备的潜在恶化。电缆管道的屏蔽在过去已经完成,HEH通量很可能远低于106 HEH/cm2/年,因此低于目前使用的中子SRAM SEU监测仪的灵敏度,直到现在显示零计数。随着束流能量的增加,未来的操作将导致施加到gto上的电压增加,从而导致更高的SEB概率。为了提高制定缓解措施所需的故障率估计的准确性,需要更灵敏的HEH通量测量。
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High Sensitivity HEH Monitor
The most critical failure mode of HV semiconductors exposed to radiation is Single Event Burnout (SEB). The probability of this catastrophic failure mode is strongly dependent on the applied bias voltage and is triggered by either heavy ions or High Energy Hadrons (HEH). The Large Hadron Collider (LHC) Beam Dumping System (LBDS) comprises 50 pulse generators operating at up to 28 kV and contains 800 HV GTOs and 480 HV IGBTs for the triggering system. All generators are installed underground in the galleries parallel to and shielded from the LHC tunnel but some HEH leak from the tunnel into the galleries via interconnecting cable ducts. Failure of a HV semiconductor due to SEB can lead to system malfunction and potential deterioration of downstream equipment. Shielding of the cable ducts has been done in the past, HEH flux is most likely well under 106 HEH/cm2/year, and therefore below the sensitivity of presently used neutron SRAM SEU monitors, showing zero counts until now. Future operation with increased beam energy will result in increased voltage applied to the GTOs and consequently higher SEB probability. In order to improve the accuracy of the failure rate estimation necessary for preparing mitigation measures, more sensitive HEH flux measurements are necessary.
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