{"title":"InGaN蓝色激光二极管负特性温度的数值研究","authors":"H. Ryu","doi":"10.1109/NUSOD.2016.7546998","DOIUrl":null,"url":null,"abstract":"GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Numerical investigation on the negative characteristic temperature of InGaN blue laser diodes\",\"authors\":\"H. Ryu\",\"doi\":\"10.1109/NUSOD.2016.7546998\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.\",\"PeriodicalId\":425705,\"journal\":{\"name\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"3 9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2016.7546998\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7546998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical investigation on the negative characteristic temperature of InGaN blue laser diodes
GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.
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