High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory

The lanthanum hexaboride (LaB 6 ) is a rare earth metal with a low work function, low resistivity, high melting-point, and chemical stability [1] . Furthermore, it was reported that the nitrogen-doped LaB 6 (N-doped LaB 6 ) realized a low work function of 2.4 eV, with oxidation immunity by suppressing the oxygen concentration below 0.3% [2] – [3] . We have reported the N-doped LaB 6 thin film formation deposited on the SiO 2 /p-Si(100) structures. The electron injection to pentacene films was realized by improving thin film quality of N-doped LaB 6 electrode [4] – [5] . In this study, we have investigated the dielectric characteristics of LaB x N y thin films formed by Ar/N 2 plasma reactive sputtering and application to the floating-gate memory device [6] .