Ajay Kumar, A. Chaudhry, Vijay Kumar, Vishal S Sharma
{"title":"双材料双栅JLFET与单材料双栅JLFET之比较","authors":"Ajay Kumar, A. Chaudhry, Vijay Kumar, Vishal S Sharma","doi":"10.1109/NGCT.2016.7877397","DOIUrl":null,"url":null,"abstract":"This paper presents a comparative study of dual material double gate junctionless transistor with the single material double gate junctionless transistor. A review of the basic modelling of the Junctionless transistor is also given in the paper. The surface potential of both structures are compared. The threshold voltage compared for both the devices shows that the single material gate has higher threshold voltage.","PeriodicalId":326018,"journal":{"name":"2016 2nd International Conference on Next Generation Computing Technologies (NGCT)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparison of dual material double gate JLFET with single material double gate JLFET\",\"authors\":\"Ajay Kumar, A. Chaudhry, Vijay Kumar, Vishal S Sharma\",\"doi\":\"10.1109/NGCT.2016.7877397\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a comparative study of dual material double gate junctionless transistor with the single material double gate junctionless transistor. A review of the basic modelling of the Junctionless transistor is also given in the paper. The surface potential of both structures are compared. The threshold voltage compared for both the devices shows that the single material gate has higher threshold voltage.\",\"PeriodicalId\":326018,\"journal\":{\"name\":\"2016 2nd International Conference on Next Generation Computing Technologies (NGCT)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 2nd International Conference on Next Generation Computing Technologies (NGCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NGCT.2016.7877397\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 2nd International Conference on Next Generation Computing Technologies (NGCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NGCT.2016.7877397","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparison of dual material double gate JLFET with single material double gate JLFET
This paper presents a comparative study of dual material double gate junctionless transistor with the single material double gate junctionless transistor. A review of the basic modelling of the Junctionless transistor is also given in the paper. The surface potential of both structures are compared. The threshold voltage compared for both the devices shows that the single material gate has higher threshold voltage.
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