基于半导体测量的二电平和三电平PFC拓扑损耗评估

B. Vermulst, J. Duarte
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引用次数: 5

摘要

查找和比较电力电子拓扑中的功率损耗最常用的方法是使用数据表中的IGBT开关损耗。然而,本文的方法是一种使用测量装置的方法,其中数据在MATLAB Simulink中与Plexim PLECS结合使用。利用该方法分析了t型、飞电容和二极管箝位多电平PFC拓扑的损耗,并与双电平PFC电路的损耗进行了比较。对整流和逆变两种模式的拓扑结构进行了分析,使用了Si和SiC二极管的igbt。结果表明,在所有模拟开关频率下,t型三电平拓扑在整流模式下的损耗最低。然而,在逆变模式下,二极管箝位和飞行电容拓扑结构的性能相同,损耗低于t型PFC,而对于低于≈30kHz的开关频率,两电平拓扑结构的损耗最低。
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Losses evaluation of two-level and three-level PFC topologies based on semiconductor measurements
Finding and comparing power losses in power electronics topologies is most commonly done by using IGBT switching losses from datasheets. The method in this paper, however, is an approach using a measurement setup, of which the data are used in MATLAB Simulink in combination with Plexim PLECS. Using this method, losses are analyzed in T-type, flying-capacitor and diode-clamped multi-level PFC topologies, and compared with the losses in a two-level PFC circuit. Analysis of the topologies is done for both rectifier and inverter mode, using IGBTs with Si and SiC diodes. The results show the lowest losses in rectifier mode are achieved with the T-type three-level topology for ail simulated switching frequencies. In inverter mode, however, the diode-clamped and flying-capacitor topologies perform equal, with lower losses than the T-type PFC, while, for switching frequencies below ≈30kHz, the two-level topology has the lowest losses.
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