{"title":"GaAs pHEMT技术中开关模式高效ka波段MMIC功率放大器","authors":"R. Negra, W. Bachtold","doi":"10.1109/EDMO.2004.1412392","DOIUrl":null,"url":null,"abstract":"A highly efficient monolithically integrated class-E power amplifier for the 22-25 GHz range is presented. The circuit is fabricated with a 0.12 /spl mu/m GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23 GHz from a 2.2 V supply. To the authors' knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.","PeriodicalId":424447,"journal":{"name":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology\",\"authors\":\"R. Negra, W. Bachtold\",\"doi\":\"10.1109/EDMO.2004.1412392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly efficient monolithically integrated class-E power amplifier for the 22-25 GHz range is presented. The circuit is fabricated with a 0.12 /spl mu/m GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23 GHz from a 2.2 V supply. To the authors' knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.\",\"PeriodicalId\":424447,\"journal\":{\"name\":\"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.2004.1412392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004. EDMO 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.2004.1412392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
摘要
提出了一种适用于22-25 GHz频段的高效单片集成e类功率放大器。该电路采用共面波导技术，采用0.12 /spl μ m GaAs pHEMT工艺制作。负荷网的合理选择和设计是保证电网高效运行的关键。测量结果表明，2.2 V电源在23 GHz时的峰值功率增加效率超过42%。据作者所知，这是迄今为止报道的ka波段e类放大器的最高功率附加效率。
Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology
A highly efficient monolithically integrated class-E power amplifier for the 22-25 GHz range is presented. The circuit is fabricated with a 0.12 /spl mu/m GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23 GHz from a 2.2 V supply. To the authors' knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.
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