{"title":"采用无源GaAs mesfet的单片双平衡混频器","authors":"T. Narhi","doi":"10.1109/MELCON.1989.50050","DOIUrl":null,"url":null,"abstract":"A monolithic double balanced mixer has been realized using 1- mu m GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.<<ETX>>","PeriodicalId":380214,"journal":{"name":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A monolithic double balanced mixer using passive GaAs MESFETs\",\"authors\":\"T. Narhi\",\"doi\":\"10.1109/MELCON.1989.50050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic double balanced mixer has been realized using 1- mu m GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.<<ETX>>\",\"PeriodicalId\":380214,\"journal\":{\"name\":\"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.1989.50050\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.1989.50050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
采用1 μ m GaAs技术实现了单片双平衡混频器。它利用MESFET在线性区域工作的通道电阻来产生具有高压缩点和低互调失真的强混频器。测量了5.5 dB的转换损耗和21 dBm的输入三阶截距点。
A monolithic double balanced mixer using passive GaAs MESFETs
A monolithic double balanced mixer has been realized using 1- mu m GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.<>
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