{"title":"gesbte基光盘在680nm处的动态特性","authors":"F. Jiang, Chao-Te Liu, L. Men, Huiyong Liu","doi":"10.1117/12.248708","DOIUrl":null,"url":null,"abstract":"The dynamic properties of a Ge-Sb-Te phase-change optical disk with low writing power (5 - 13 mw) at 680 nm were investigated. The Carrier/Noise of the disk is about 45 approximately 60 dB and the Erase ratio is 23 approximately 28 dB.","PeriodicalId":212484,"journal":{"name":"Optical Storage and Information Data Storage","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dynamic properties of a GeSbTe-based optical disk at 680nm\",\"authors\":\"F. Jiang, Chao-Te Liu, L. Men, Huiyong Liu\",\"doi\":\"10.1117/12.248708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dynamic properties of a Ge-Sb-Te phase-change optical disk with low writing power (5 - 13 mw) at 680 nm were investigated. The Carrier/Noise of the disk is about 45 approximately 60 dB and the Erase ratio is 23 approximately 28 dB.\",\"PeriodicalId\":212484,\"journal\":{\"name\":\"Optical Storage and Information Data Storage\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Storage and Information Data Storage\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.248708\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Storage and Information Data Storage","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.248708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dynamic properties of a GeSbTe-based optical disk at 680nm
The dynamic properties of a Ge-Sb-Te phase-change optical disk with low writing power (5 - 13 mw) at 680 nm were investigated. The Carrier/Noise of the disk is about 45 approximately 60 dB and the Erase ratio is 23 approximately 28 dB.
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