GE高密度互连:解决系统互连问题

M. Adler
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引用次数: 12

摘要

值得注意的是,通用电气高密度互连(GE-HDI)是数字多芯片封装问题的优秀解决方案,它为模拟电源、微波、显示和传感器等其他困难的系统互连问题提供了解决方案。GE-HDI提供了最接近晶圆级集成的混合解决方案,实现了性能和密度的优势,而没有单片方法的限制和良率问题。相对于其他混合应用,由于其溅射金属互连和出色的热性能,它在性能和预期可靠性方面具有显着优势,同时不牺牲密度或成本。无掩模自适应光刻允许快速原型设计和灵活的设计和调试。由于完全没有用于掩模或胶带粘合的工具,NRE的成本是所有多芯片模块技术中最低的。HDI还需要最少的加工步骤,因为不需要在磁带上安装芯片或做引线或芯片碰撞
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GE high density interconnect: a solution to the system interconnect problem
It is noted that the General Electric high density interconnect (GE-HDI) is an excellent solution to the digital multichip packaging problem, and it offers solutions to other difficult system interconnect problems in analog power, microwave, display, and sensors. GE-HDI offers the closest hybrid solution to wafer scale integration, achieving the benefits of performance and density without the limitations and yield problems of the monolithic approach. Relative to other hybrid applications, it offers significant advantages in performance and anticipated reliability due to its sputtered metal interconnection and excellent thermal properties while not sacrificing density or cost. Maskless adaptive lithography allows for rapid prototyping and flexibility in design and debugging. With the complete absence of tooling for mask or tape bonding, NRE costs are the lowest of any multichip module technology. HDI also requires the fewest processing steps, because there is no need to mount die on tape or to do lead or die bumping.<>
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