Shize Guo, Lu Tang, Xusheng Tang, Qin Li, N. Jiang
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引用次数: 1
摘要
本文设计了一种基于25 μ m GaAs衬底和平面肖特基二极管的840GHz单片三频器。为了提高转换效率，电路中采用了改进的平衡结构。这种结构平衡了射频路径，同时抑制了均匀谐波。基于肖特基二极管的物理特性，建立了平面肖特基二极管的电磁模型。对三倍器的无源部分进行了电磁仿真。在输入功率为10dBm时，三倍器的峰值转换效率为5.82%，最大输出功率为−2.35dBm。在839ghz ~ 849ghz频率范围内，转换效率一般大于3%。
An 840GHz GaAs Monolithic Improved Balanced Frequency Tripler
In this paper, an 840GHz monolithic frequency tripler is designed based on a $25-\mu \mathrm{m}$ GaAs substrate and planar Schottky diode. In order to improve the conversion efficiency, an improved balance structure is used in the circuit. This structure balances the RF path while suppressing even harmonics. An electromagnetic model of planar Schottky diodes is established based on physical characteristics. The passive part of the frequency tripler is electromagnetic simulated. At a 10dBm input power, the peak conversion efficiency of the frequency tripler is 5.82%, and the maximum output power is −2.35dBm. In the frequency range of 839 GHz to 849 GHz, the conversion efficiency is typically greater than 3%.
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