一种用于AlGaN/GaN技术国防应用的超宽带鲁棒LNA

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI:10.1109/MWSYM.2010.5514984

E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni

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引用次数: 39

摘要

本文报道了一种采用0.25µm AlGaN/GaN HEMT技术的2-18 GHz单片低噪声放大器的设计、制造和测试。在2 - 18ghz频率范围内，放大器的实测噪声系数小于4.7dB，在3ghz频率范围内噪声系数最小为3.3 dB。LNA增益为23dB。即使作为一个低噪声放大器，MMIC也可以承受10W输入的连续波射频功率，没有明显的衰减:据作者所知，这是迄今为止使用GaN技术在该频率范围内报道的最佳射频LNA生存能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology

The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.

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2010 IEEE MTT-S International Microwave Symposium

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