{"title":"双栅隧道场效应管性能的TCAD评估方法","authors":"B. Dewan, M. Yadav","doi":"10.1109/incet49848.2020.9154181","DOIUrl":null,"url":null,"abstract":"This paper analyses the performance of a double-gate tunnel field-effect transistor (DGTFET) using two-dimensional device simulations. DGTFET is compared with double-gate MOSFET and it is observed that DGTFET has lower OFF state current which makes it quite useful in low-power applications. Futhermore, the device parameters such as gate oxide thickness, gate metal work function, dielectric materials and doping concentrations of DGTFET are varied and their effect on drain current and ambipolar current is analyzed. Also, it is observed that the value of subthreshold swing for DGTFET is not limited to 60 mV/decade as in case of MOSFET.","PeriodicalId":174411,"journal":{"name":"2020 International Conference for Emerging Technology (INCET)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A TCAD approach to evaluate the performance of Double Gate Tunnel FET\",\"authors\":\"B. Dewan, M. Yadav\",\"doi\":\"10.1109/incet49848.2020.9154181\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper analyses the performance of a double-gate tunnel field-effect transistor (DGTFET) using two-dimensional device simulations. DGTFET is compared with double-gate MOSFET and it is observed that DGTFET has lower OFF state current which makes it quite useful in low-power applications. Futhermore, the device parameters such as gate oxide thickness, gate metal work function, dielectric materials and doping concentrations of DGTFET are varied and their effect on drain current and ambipolar current is analyzed. Also, it is observed that the value of subthreshold swing for DGTFET is not limited to 60 mV/decade as in case of MOSFET.\",\"PeriodicalId\":174411,\"journal\":{\"name\":\"2020 International Conference for Emerging Technology (INCET)\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference for Emerging Technology (INCET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/incet49848.2020.9154181\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference for Emerging Technology (INCET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/incet49848.2020.9154181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A TCAD approach to evaluate the performance of Double Gate Tunnel FET
This paper analyses the performance of a double-gate tunnel field-effect transistor (DGTFET) using two-dimensional device simulations. DGTFET is compared with double-gate MOSFET and it is observed that DGTFET has lower OFF state current which makes it quite useful in low-power applications. Futhermore, the device parameters such as gate oxide thickness, gate metal work function, dielectric materials and doping concentrations of DGTFET are varied and their effect on drain current and ambipolar current is analyzed. Also, it is observed that the value of subthreshold swing for DGTFET is not limited to 60 mV/decade as in case of MOSFET.
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