考虑单事件双节点扰流和单事件瞬变的低成本顺序逻辑电路设计

R. Rajaei, M. Niemier, X. Hu
{"title":"考虑单事件双节点扰流和单事件瞬变的低成本顺序逻辑电路设计","authors":"R. Rajaei, M. Niemier, X. Hu","doi":"10.1109/ICCD53106.2021.00038","DOIUrl":null,"url":null,"abstract":"As CMOS device sizes continue to scale down, radiation-related reliability issues are of ever-growing concern. Single event double node upsets (SEDUs) in sequential logic and single event transients (SETs) in combinational logic are sources of high rate radiation-induced soft errors that can affect the functionality of logic circuits. This paper presents effective circuit-level solutions for combating SEDUs/SETs in nanoscale sequential and combinational logic circuits. More specifically, we propose and evaluate low-power latch and flip-flop circuits to mitigate SEDUs and SETs. Simulations with a 22 nm PTM model reveal that the proposed circuits offer full immunity against SEDUs, can better filter SET pulses, and simultaneously reduce design overhead when compared to prior work. As a representative example, simulation-based studies show that our designs offer up to 77% improvements in delay-power-area product, and can filter out up to 58% wider SET pulses when compared to the state-of-the-art.","PeriodicalId":154014,"journal":{"name":"2021 IEEE 39th International Conference on Computer Design (ICCD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-Cost Sequential Logic Circuit Design Considering Single Event Double-Node Upsets and Single Event Transients\",\"authors\":\"R. Rajaei, M. Niemier, X. Hu\",\"doi\":\"10.1109/ICCD53106.2021.00038\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As CMOS device sizes continue to scale down, radiation-related reliability issues are of ever-growing concern. Single event double node upsets (SEDUs) in sequential logic and single event transients (SETs) in combinational logic are sources of high rate radiation-induced soft errors that can affect the functionality of logic circuits. This paper presents effective circuit-level solutions for combating SEDUs/SETs in nanoscale sequential and combinational logic circuits. More specifically, we propose and evaluate low-power latch and flip-flop circuits to mitigate SEDUs and SETs. Simulations with a 22 nm PTM model reveal that the proposed circuits offer full immunity against SEDUs, can better filter SET pulses, and simultaneously reduce design overhead when compared to prior work. As a representative example, simulation-based studies show that our designs offer up to 77% improvements in delay-power-area product, and can filter out up to 58% wider SET pulses when compared to the state-of-the-art.\",\"PeriodicalId\":154014,\"journal\":{\"name\":\"2021 IEEE 39th International Conference on Computer Design (ICCD)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 39th International Conference on Computer Design (ICCD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD53106.2021.00038\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 39th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD53106.2021.00038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

随着CMOS器件尺寸的不断缩小,与辐射相关的可靠性问题日益受到关注。顺序逻辑中的单事件双节点扰动(SEDUs)和组合逻辑中的单事件瞬变(SETs)是高速率辐射引起的软误差的来源,可以影响逻辑电路的功能。本文提出了在纳米级顺序和组合逻辑电路中对抗sedu / set的有效电路级解决方案。更具体地说,我们提出并评估了低功耗锁存器和触发器电路,以减轻sedu和set。利用22 nm PTM模型进行的仿真表明,与之前的工作相比,所提出的电路对sedu具有完全的抗扰性,可以更好地过滤SET脉冲,同时降低了设计开销。作为一个代表性的例子,基于仿真的研究表明,我们的设计在延迟功率面积产品方面提供了高达77%的改进,并且与最先进的相比,可以过滤出高达58%的宽SET脉冲。
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Low-Cost Sequential Logic Circuit Design Considering Single Event Double-Node Upsets and Single Event Transients
As CMOS device sizes continue to scale down, radiation-related reliability issues are of ever-growing concern. Single event double node upsets (SEDUs) in sequential logic and single event transients (SETs) in combinational logic are sources of high rate radiation-induced soft errors that can affect the functionality of logic circuits. This paper presents effective circuit-level solutions for combating SEDUs/SETs in nanoscale sequential and combinational logic circuits. More specifically, we propose and evaluate low-power latch and flip-flop circuits to mitigate SEDUs and SETs. Simulations with a 22 nm PTM model reveal that the proposed circuits offer full immunity against SEDUs, can better filter SET pulses, and simultaneously reduce design overhead when compared to prior work. As a representative example, simulation-based studies show that our designs offer up to 77% improvements in delay-power-area product, and can filter out up to 58% wider SET pulses when compared to the state-of-the-art.
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